Neutron Induced Failure tests of 3300-V IGBTs for the Spallation Neutron Source Accelerator

Focus:

The 1-GeV Spallation Neutron Source (SNS) Accelerator at Oak Ridge National Laboratory employs a large number of 3300-V rated IGBTs within the converter-modulators that power the accelerator’s RF transmitters. This paper presents results of a study that found these IGBTs to be susceptible to cosmic radiation and determined a critical voltage threshold for these devices above which device failure rates (due to neutron interaction with the semiconductor material) rise significantly. This voltage threshold was well below the 3300-V breakdown voltage rating of the IGBTs. This paper describes the cosmic-radiation induced failure mode, the tests that were conducted to assess IGBT susceptibility, and analysis of the results including a sample failure curve. Finally, projections are made on the expected lifetimes and failure rates of the IGBTs within the SNS accelerator application.

What you’ll learn:

• How to understand the cosmic radiation induced failure mode in IGBTs
• How to test susceptibility of IGBTs to failures caused by neutron interactions associated with cosmic radiation
• How to understand the impact of cosmic radiation on IGBT working voltage

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Author & Publication:

D.L. Borovina, J.T. Bradley III, M. Pieck, R. S. Przeklasa, T. W. Hardek, M. T. Lynch, D. E. Rees, P. J. Tallerico, W. A. Reass, S. A. Wender, B. E. Takala S. C. Ruggles, LANL, Los Alamos, NM 87545, USA, Research Gate, May 12 2003

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