Gate-Voltage Control Minimizes EMI from IGBTs

Focus:

Acting like an integrated adjustable snubber, the gate-voltage control technique reduces di/dt during turn-on commutation, reducing overcurrents and high-frequency oscillations associated with diode reverse recovery.

What you’ll learn:

• How to minimize EMI generated by IGBTs
• How to reduce di/dt during turn-on commutation of MOSFETs or IGBTs
• How to reduce overcurrent and high-frequency oscillations associated with diode

View the Source

Author & Publication:

N. Idir Associate, Professor, and J.J. Franchaud, Research Engineer, Université des Sciences et Technologies de Lille, Laboratoire d'Electronique et Electronique de Puissance (L2EP), Villeneuve d'Ascq, France , Power Electronics Technology, Feb 01 2004

This article summary appears
in the HOW2POWER Design Guide.

The Design Guide offers
organized access to
hundreds of articles
on dozens of power conversion
and power management topics.

The Design Guide search results
include exclusive summaries
and accurate "how to" analysis
to help you make faster,
more informed decisions.

Search
for more articles