Power Semiconductor Manufacturer Introduces GaN-Based Power Device Technology

Focus:

Press release from International Rectifier announces the company’s development of gallium nitride (GaN)-based power device technology, using the company’s GaN-on-silicon epitaxial technology. This is one of the power semi industry’s early GaN announcements. Prototypes would be shown at that year’s Electronica show.

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Author & Publication:

Press release, no author specified, Vendor website, Sep 09 2008

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