Emerging High-Voltage Apps Accelerate Silicon Carbide Growth

Focus:

This year represents a turning point for SiC power technology as commercial power transistors have emerged to complement SiC Schottky diodes, which have been around for a few years now. Targeting applications requiring breakdown voltages of 600 V and above, manufacturers have begun to commercialize high-voltage SiC power transistors. At the same time, new players have announced entry into this space where designers are exploring every angle to get the next level of improvement in energy efficiency with a higher degree of ruggedness and the ability to withstand much higher temperatures. In this column, Bindra explores recent activity in SiC development that is giving these devices a new boost.

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Author & Publication:

Ashok Bindra, How2Power Today, How2Power Today, Apr 29 2011

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