RFMD Leverages RF GaN Capability To Build Power HEMTs

Focus:

In Bindra’s last column, he wrote about the growing list of suppliers of gallium nitride (GaN) based power devices, both transistors and diodes. In this issue, he adds one more to the list—RF Micro Devices (RFMD) and discusses the technology they recently announced at PCIM Europe. At this event, the RF semiconductor supplier unwrapped its newest GaN process technology called rGaN-HV, optimized for high-voltage, high-power devices for power conversion applications.

View the Source

Author & Publication:

Ashok Bindra, How2Power Today, How2Power Today, May 24 2012

This article summary appears
in the HOW2POWER Design Guide.

The Design Guide offers
organized access to
hundreds of articles
on dozens of power conversion
and power management topics.

The Design Guide search results
include exclusive summaries
and accurate "how to" analysis
to help you make faster,
more informed decisions.

Search
for more articles