Transitioning To SiC-Based Devices Is Not That Simple

Focus:

The properties of wide bandgap materials like silicon carbide (SiC) and the devices derived from it have been well publicized. Because SiC-based transistors and diodes promise substantial performance improvements over their silicon counterparts, these devices are turning out to be very attractive to some power supply designers. However, as some designers in industry have discovered, SiC power transistors are not simple drop-in replacements for their silicon counterparts. The new devices have characteristics that are so different from silicon that transitioning to SiC components in power conversion designs is not a simple task. The changeover to SiC requires a thorough understanding of the device properties in order to fully tap their performance benefits. What’s more, if these devices are not implemented correctly in the end system, they could turn out to be a pain instead of a desirable solution. In this column, Bindra shares the insights of engineers in industry on the challenges of making the switch to SiC power transistors.

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Author & Publication:

Ashok Bindra, How2Power Today, How2Power Today, Aug 15 2013

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