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GaN Transistors—Grrr or Great? Focus: Tempted by market opportunities, GaN device vendors are rushing high-voltage (600 V)
GaN power transistors to market under a veil of secrecy and without fully addressing
all the technical issues. In this insightful commentary, the author discusses GaN
voltage ratings in light of industry experience with SiC devices, and how it suggests
the need for greater derating of parts until the technology matures. The author also
explains why blocking voltage (as determined by leakage current limits) establishes
the true voltage rating for a device. Also discussed are the following market or
industry requirements: an improved cascode circuit using GaN devices rather silicon SJ
MOSFETs; slew-rate control; hybrid integration using QFN packaging; a standardized
package with source sense connection and minimized loop inductance; and standards for
device qualification. Though the author is with GaN Systems, he cites the opinions of
authorities at other GaN companies and other vendors’ developments.
View the Source
Author & Publication: John Roberts, Bodo's Power Systems, Bodo's Power Systems, Jul 01 2013
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