Delivering efficient power conversion with package-free HEMTs

Focus:

The title and deck suggest this article is about the benefits of eliminating the package for GaN power HEMTs. Actually, it’s the story of the eGaN FET and one of its creators, Alex Lidow. This is part technical history, part memoir, with interesting details about why, where, when and who developed this technology. The story takes us all the way back to Lidow’s time as a grad student at Stanford through his development of the silicon power MOSFET at International Rectifier and his many years there. Lidow relates the lessons learned along the way and how they were brought to bear in developing the enhancement-mode, lateral GaN HEMTs at Efficient Power Conversion (EPC). Lidow recounts the founding of EPC, the early development of the eGaN FETs (what EPC calls their HEMTs), details about these devices, and EPC’s efforts in bringing them to market. Yes, you’ll also learn why they offer their transistors in a “package-less” LGA format, and other technical decisions. But it’s the personal story behind these decisions that makes this an interesting read.

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Author & Publication:

Alex Lidow, Power Electronics World, Power Electronics World, Jun 24 2013

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