High-Voltage SiC Devices Aim To Revolutionize Utility-Scale Power Conversion

Focus:

The U.S. Department of Energy's Advanced Research Projects Agency-Energy (ARPA-E) has been holding its Energy Innovation Summit for the past three years. At this year’s event, some promising silicon carbide (SiC) and gallium nitride (GaN) based devices and solutions were highlighted in the summit’s technology showcase. Among the companies and R&D institutions exhibiting ARPA-E funded ultra-high voltage SiC achievements were GeneSiC Semiconductor, Silicon Power, and Cree. These firms are exploiting the advantages of silicon carbide to create novel thyristors and IGBTs that promise to dramatically improve the power electronics developed for grid applications. Meanwhile, another ARPA-E awardee, Arkansas Power Electronics International, displayed its highly integrated SiC modules for plug-in hybrid electric vehicles (PHEVs).

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Author & Publication:

Ashok Bindra, How2Power Today, How2Power Today, Mar 15 2013

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