Normally-Off and Current Collapse Free by Unique GIT Technology Realize Commercialization of GaN Transistor

Focus:

This short article describes the benefits of a GaN power transistor developed by Panasonic. The Gate-Injection Transistor (GIT) technology on silicon substrate is used to fabricate a normally off device that eliminates the need for cascode structures and whose design prevents current collapse, allowing operation at high voltage. (The device has been tested up to 800 V.) The article explains current collapse; describes the GIT structure, how it works and how (in broad strokes) it overcomes current collapse. There is a comparison of FOM for the normally-off GIT GaN with that of a silicon MOSFET and the demonstration of the GaN transistor in a high efficiency 1-kW dc-dc converter is noted (See pages 18-21 of source PDF.)

View the Source

Author & Publication:

Howard Sin, Power Systems Design, Power Systems Design Europe, Nov 14 2013

This article summary appears
in the HOW2POWER Design Guide.

The Design Guide offers
organized access to
hundreds of articles
on dozens of power conversion
and power management topics.

The Design Guide search results
include exclusive summaries
and accurate "how to" analysis
to help you make faster,
more informed decisions.

Search
for more articles