GaN Suppliers Continue to Push the Performance Envelope

Focus:

After months of sampling its 650-V normally-off source-switched FETs (SSFETs), RF Micro Devices (RFMD) plans to ramp up production of these devices by early next year and the company has readied a boost circuit evaluation board to help designers evaluate these parts. The company is also developing another eval board incorporating a totem pole power factor correction (PFC) circuit, which is expected to be launched at APEC 2014. RFMD is also readying new members in the 650-V GaN family with a 1200-V version on the roadmap. Meanwhile, Efficient Power Conversion has extended its family of high-speed, high-performance eGaN FETs with the addition of third-generation devices with switching transition speeds in the sub-nanosecond range. The recently released EPC8000 devices are capable of hard switching above 10 MHz. Bindra discusses these and other GaN power developments in this month’s column.

View the Source

Author & Publication:

Ashok Bindra, How2Power Today, How2Power Today, Oct 15 2013

This article summary appears
in the HOW2POWER Design Guide.

The Design Guide offers
organized access to
hundreds of articles
on dozens of power conversion
and power management topics.

The Design Guide search results
include exclusive summaries
and accurate "how to" analysis
to help you make faster,
more informed decisions.

Search
for more articles