GaN Power Modules Promise to Raise the Performance Bar

Focus:

With the advent of 600-V and higher-voltage gallium nitride (GaN) based power devices, including diodes, manufacturers are developing GaN-based power modules that promise to overcome the limitations of bipolar and IGBT modules, which are bulky with large screw terminals and high-voltage spacing. It is observed that these conventional IGBT and bipolar modules limit performance in terms of speed, efficiency and density. Because high-voltage GaN-based power transistors and diodes offer faster switching, higher efficiency, and better power density, GaN power modules must overcome the limitations of bipolar and IGBT modules to realize the full benefits of the new technology. Consequently, GaN-based power devices are seeking new packaging solutions that enable smaller, faster, less lossy, and integrated modules that deliver optimum performance with cost effectiveness. Several applications appear ready to tap the benefits of GaN-based power modules.

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Author & Publication:

Ashok Bindra, How2Power Today, How2Power Today, Sep 16 2013

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