How2Power.com
Answering your Questions about Power Design  

Interface Panel Addresses Special Connection Challenges In On-Wafer Testing Of Power Semiconductor Devices

Focus:

Measuring dc and capacitance parameters for high-power semiconductor devices requires substantial expertise to optimize the accuracy of various measurements. Even for those with this level of expertise, managing set-up changes between on-state current-versus-voltage (I-V), off-state I-V and capacitance-versus-voltage (C-V) measurements can be time consuming and prone to errors; this is especially true in the on-wafer environment. This article begins by examining the various measurement requirements that make wafer-level testing of power devices challenging with respect to making the test set-ups. It then describes the unique features of the Model 8020 interface panel that can be used to simplify the test setups, while making them more accurate and repeatable.


What you’ll learn:

  • How to understand the requirements for making wafer-level measurements of power semiconductor devices
  • How to simplify test setups for performing capacitance-versus-voltage (C-V) and other wafer-level measurements on power semiconductor devices
  • How to improve accuracy and repeatability of wafer-level measurements on power semiconductor devices


View the Source


Author & Publication:

Jennifer Cheney, Keithley Instruments, Cleveland, Ohio , How2Power Today, Mar 13 2015

This article summary appears
in the HOW2POWER Design Guide.


The Design Guide offers
organized access to
hundreds of articles
on dozens of power conversion
and power management topics.


The Design Guide search results
include exclusive summaries
and accurate "how to" analysis
to help you make faster,
more informed decisions.

Search
for more articles


   
   
   
   
   
About | Design Guide | Newsletter | SiC & GaN | Power Magnetics | Power Links | Events | Careers | Bookstore | Consultants | Contacts | Home | Sitemap   

This site is protected by copyright laws under U.S. and international law. All rights reserved.