Power Nitride Doping Innovation Offers Devices Enabling SWITCHES

Focus:

ARPA-E’s PNDIODES (Power Nitride Doping Innovation Offers Devices Enabling SWITCHES) program seeks to develop transformational advances in the process of selective area doping in the wide-bandgap semiconductor, gallium nitride, and its alloys. This announcement discusses the companies and projects being funded.

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Author & Publication:

No author specified, press release, Organizational website, Jun 22 2017

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