Demo Shows Potential For Moving GaN-In-Silicon To 8-inch Wafers

Focus:

Kyma Technologies has used its new K200 hydride vapor phase epitaxy (HVPE) growth tool to produce high-quality 200-mm diameter HVPE GaN on QST templates. According to Kyma’s Keith Evans, this demo overcomes two of the big challenges faced in moving GaN on silicon to 8 inch wafers.

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Author & Publication:

No author specified, How2Power Today, How2Power Today, Nov 16 2017

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