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                     The Power Supply Designer’s Guide To Radiation Effects in Power Semiconductors Focus: This article explains the fundamentals of radiation hardened power semiconductors as 
well as the practical aspects of using these components. This includes explanations of 
what happens when different types of charged subatomic particles bombard power 
semiconductor devices in space and the various types of tests used to qualify rad hard 
power devices for space. These tests gauge a semiconductor’s ability to withstand 
different types of radiation effects such as SEE, TID, ELDRS, LET, SEB, and SEGR. 
These tests are explained in the context of the familiar power transistors and 
rectifiers. As the author discusses, certain device structures are more vulnerable to 
specific radiation effects than others, and the design of radiation hardened devices 
reflects these sensitivities. In some cases, device rating or the choice of power 
supply topology may be affected, as discussed here. Other topics covered include 
neutron bombardment, how rad hard applies to integrated circuits, and how to interpret 
the coding in a space-grade part number. 
 What you’ll learn: 	- How to understand the fundamentals of radiation hardness as applied to power 
semiconductors
 	- How to understand rad hard effects and the tests used to gauge semiconductor 
susceptibility to these effects
 	- How to understand key design considerations when specifying and applying rad hard power 
semiconductors
  
 View the Source 
 Author & Publication: Paul L. Schimel, Microchip Technology, Chicago, Ill., How2Power Today, Jun 15 2020  
                     
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                	 This article summary appears  
          			in the  HOW2POWER Design Guide. 
                     
                     
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