How2Power.com
Answering your Questions about Power Design  

GaN Device Manufacturer Demonstrates GaN FET Power Switching At 800 V

Focus:

GaN Power International has demonstrated power switching capability in a double pulse testing board at 800 V and 7 to 8 A for its GPIHV30DFN and GPIHV30SB5L 1200-V GaNFETs.



View the Source


Author & Publication:

How2Power Today, How2Power Today, Oct 15 2021

This article summary appears
in the HOW2POWER Design Guide.


The Design Guide offers
organized access to
hundreds of articles
on dozens of power conversion
and power management topics.


The Design Guide search results
include exclusive summaries
and accurate "how to" analysis
to help you make faster,
more informed decisions.

Search
for more articles


   
   
   
   
   
About | Design Guide | Newsletter | SiC & GaN | Power Magnetics | Power Links | Events | Careers | Bookstore | Consultants | Contacts | Home | Sitemap   

This site is protected by copyright laws under U.S. and international law. All rights reserved.