Electrothermal Models Predict Power MOSFET Performance More Accurately

Focus:

Vendor-supplied models of discrete power MOSFETs are limited. Most standard models can only be used to simulate how a discrete device will behave at a nominal temperature and they neglect device parameters that provide insight into electromagnetic compatibility (EMC) performance. This article explores the limitations of standard models for power MOSFETs by simulating a simple half-bridge circuit typically used in motor control. It then demonstrates the improved accuracy that can be obtained by performing the same simulation using an advanced electrothermal model developed by Nexperia. Simulated versus measured double-pulse test data is compared for Nexperia’s BUK7S1R0-40H MOSFET.

What you’ll learn:

• How to understand the limitations of vendor-supplied models for power MOSFETs
• How to understand the benefits of Nexperia’s electrothermal models for its power MOSFETs

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Author & Publication:

Andy Berry, Nexperia, Manchester, U.K., How2Power Today, Jul 15 2022

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